Number of Channels: | 1 Channel |
Product Type: | MOSFET |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Subcategory: | MOSFETs |
Channel Mode: | Enhancement |
Part # Aliases: | TP0610K-E3 |
USHTS: | 8541210095 |
Pd - Power Dissipation: | 350 mW |
Rds On - Drain-Source Resistance: | 6 Ohms |
Id - Continuous Drain Current: | 185 mA |
Vgs - Gate-Source Voltage: | 10 V |
JPHTS: | 8541210101 |
KRHTS: | 8541219000 |
Transistor Polarity: | P-Channel |
Minimum Operating Temperature: | - 55 C |
MXHTS: | 85412101 |
Package / Case: | SOT-23-3 |
Tradename: | TrenchFET |
Maximum Operating Temperature: | + 150 C |
Packaging: | Reel |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Brand: | Vishay Semiconductors |
Factory Pack Quantity: | 3000 |
TARIC: | 8541210000 |
Manufacturer: | Vishay |
Typical Turn-Off Delay Time: | 35 ns |
Product Category: | MOSFET |
Unit Weight: | 0.000282 oz |
Forward Transconductance - Min: | 80 mS |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Series: | TP0 |
Qg - Gate Charge: | 1.7 nC |
Transistor Type: | 1 P-Channel |
ECCN: | EAR99 |
CAHTS: | 8541210000 |
Technology: | Si |
CNHTS: | 8541210000 |