| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| HTS | 8541.40.70.80 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Supplier Package | T-1 |
| Phototransistor Type | Phototransistor |
| Package Height | 4.5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Polarity | NPN |
| Lens Shape Type | Domed |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 200 |
| Maximum Collector Current (mA) | 50 |
| Material | Silicon |
| Package Length | 3.9 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Cut-Off Filter | Visible Cut-off |
| Pin Count | 2 |
| Mounting | Through Hole |
| Type | IR Chip |
| Half Intensity Angle Degrees (°) | 60 |
| Viewing Orientation | Top View |
| Part Status | Active |
| Peak Wavelength (nm) | 925 |
| Package Width | 3.2 |
| Maximum Light Current (uA) | 3200(Typ) |
