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SISS23DN-T1-GE3
Vishay

SISS23DN-T1-GE3

Vishay MOSFET, TrenchFET 系列, P沟道, Si, Vds=20 V, 27 A, 8引脚 PowerPAK 1212封装
中间价(CNY):2.81
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SISS23DN-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)8840@15V
ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)150|140
PCB changed8
HTS8541.29.00.95
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)5|50
Maximum Power Dissipation (mW)4800
Channel ModeEnhancement