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SIS330DN-T1-GE3
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SIS330DN-T1-GE3

Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R
中间价(CNY):-
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SIS330DN-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)1300@15V
ConfigurationSingle Quad Drain Triple Source
PCB changed8
Typical Turn-Off Delay Time (ns)19|16
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)12|9
Maximum Power Dissipation (mW)3700
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)16|11