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SIHG24N65E-GE3
Vishay

SIHG24N65E-GE3

Vishay MOSFET, E Series 系列, N沟道, Si, Vds=650 V, 24 A, 3引脚 TO-247AC封装
中间价(CNY):27.8168
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SIHG24N65E-GE3 规格参数
Typical Input Capacitance @ Vds (pF)2740@100V
ConfigurationSingle
PCB changed3
Typical Turn-Off Delay Time (ns)70
HTS8541.29.00.95
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)84
Maximum Power Dissipation (mW)250000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)24