SI7850DP-T1-E3 规格参数
| Technology System | MOSFET(Metal Oxide) |
| Operating temperature range | -55 to 150C |
| Series name | TrenchFET(R) |
| Vgs(th) | 3 V |
| Gate Charge (Qg) | 27nC |
| Drain to Source voltage | 60V |
| Drain to Source on-state resistance | 22mOhm |
| Power consumption | 1.8W |
| Continuous drain current | 6.2A |
| Vgs (Max) | 20V |
| Field-effect transistor type | N-CH |