Configuration | Dual Dual Drain |
Typical Turn-Off Delay Time (ns) | 45|40 |
Maximum Gate Source Leakage Current (nA) | 100 |
Typical Rise Time (ns) | 35|8 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 42|10 |
Automotive | No |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Channel Type | P |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 8 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 32 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Drain Source Resistance (mOhm) | 29@10V |
Standard Package Name | SOP |
Typical Reverse Recovery Charge (nC) | 22 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 7.3 |
Pin Count | 8 |
Mounting | Surface Mount |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 185@15V |
Lead Shape | Gull-wing |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 7.5 |
Packaging | Tape and Reel |
Typical Gate Charge @ Vgs (nC) | 32@15V|15@4.5V |
Typical Input Capacitance @ Vds (pF) | 1350@15V |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
PCB changed | 8 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 2 |
Typical Reverse Recovery Time (ns) | 34 |
ECCN (US) | EAR99 |
Maximum Power Dissipation (mW) | 2500 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Typical Fall Time (ns) | 12|16 |
Process Technology | TrenchFET |
Typical Gate to Source Charge (nC) | 4 |
Package Height | 1.55(Max) |
Maximum Positive Gate Source Voltage (V) | 20 |
Military | No |
Maximum Gate Source Voltage (V) | ±20 |
Typical Gate Plateau Voltage (V) | 3.4 |
Package Length | 5(Max) |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.75 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Output Capacitance (pF) | 215 |
Part Status | Active |
Maximum Gate Threshold Voltage (V) | 3 |
Package Width | 4(Max) |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |