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SI4888DY-T1-E3
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SI4888DY-T1-E3

Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
中间价(CNY):-
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SI4888DY-T1-E3 规格参数
ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)44
PCB changed8
HTS8542.39.00.01
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)10
Maximum Power Dissipation (mW)3500
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)14
AutomotiveNo
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