首页/SI4860DY-T1-E3搜索结果/SI4860DY-T1-E3规格参数/
SI4860DY-T1-E3
Vishay

SI4860DY-T1-E3

Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
中间价(CNY):-
推荐供应商
SI4860DY-T1-E3 规格参数
ConfigurationSingle Quad Drain Triple Source
PCB changed8
Typical Turn-Off Delay Time (ns)46
HTS8541.29.00.95
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)12
Maximum Power Dissipation (mW)3500
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)18
AutomotiveNo