Typical Input Capacitance @ Vds (pF) | 375@20V |
Configuration | Dual Dual Drain |
Typical Turn-Off Delay Time (ns) | 17 |
PCB changed | 8 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 2 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 60 |
Maximum Power Dissipation (mW) | 1900 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 33 |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC N |
Typical Fall Time (ns) | 22 |
Process Technology | TrenchFET |
Package Height | 1.55(Max) |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 5.7 |
Military | No |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 32.5@10V |
Package Length | 5(Max) |
Typical Gate Charge @ 10V (nC) | 6.8 |
Standard Package Name | SOP |
Pin Count | 8 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Part Status | Obsolete |
Product Category | Power MOSFET |
Package Width | 4(Max) |
Typical Gate Charge @ Vgs (nC) | 6.8@10V|3.3@4.5V |