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SI4178DY-T1-GE3
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SI4178DY-T1-GE3

N-Channel 30 V 0.021 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
中间价(CNY):1.72
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SI4178DY-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)405@15V
ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)11|12
PCB changed8
HTS8541.29.00.95
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)15|10
Maximum Power Dissipation (mW)2400
Channel ModeEnhancement