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SI1926DL-T1-E3
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SI1926DL-T1-E3

Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
中间价(CNY):1.217
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SI1926DL-T1-E3 规格参数
Typical Input Capacitance @ Vds (pF)18.5@30V
ConfigurationDual
Typical Turn-Off Delay Time (ns)13
PCB changed6
HTS8541.10.00.80
Maximum Gate Source Leakage Current (nA)150
Number of Elements per Chip2
ECCN (US)EAR99
Typical Rise Time (ns)12
Maximum Power Dissipation (mW)300
Channel ModeEnhancement