| Current, Drain | 4.3 A |
| Typical Gate Charge @ Vgs | Maximum of 8.3 nC @ 10 V |
| Polarization | N-Channel |
| Capacitance, Input | 180 pF @ 25 V |
| Temperature Operating Range | -55 to +150 °C |
| Configuration | Single |
| Voltage, Gate to Source | ±20 V |
| Number of Elements per Chip | 1 |
| Resistance, Drain to Source On | 0.54 Ω |
| Gate Charge, Total | 8.3 nC |
| Channel Type | N |
| Number of Pins | 3 |
| Height | 0.094" (2.38mm) |
| Maximum Operating Temperature | +150 °C |
| Width | 0.245" (6.22mm) |
| Voltage, Forward, Diode | 2.5 V |
| Dimensions | 6.73 x 6.22 x 2.38 mm |
| Time, Turn-Off Delay | 15 ns |
| Product Header | Hexfet® Power MOSFET |
| Mounting Type | Surface Mount |
| Time, Turn-On Delay | 6.9 ns |
| Minimum Operating Temperature | -55 °C |
| Package Type | DPAK |
| Power Dissipation | 25 W |
| Series | IRF Series |
| Forward Transconductance | 1.6 S |
| Length | 0.264" (6.73mm) |
| Voltage, Drain to Source | 100 V |
| Voltage, Breakdown, Drain to Source | 100 V |
