| Current, Drain | 46 A |
| Typical Gate Charge @ Vgs | Maximum of 230 nC @ 10 V |
| Polarization | N-Channel |
| Capacitance, Input | 5200 pF @ 25 V |
| Temperature Operating Range | -55 to +150 °C |
| Configuration | Single |
| Voltage, Gate to Source | ±20 V |
| Number of Elements per Chip | 1 |
| Resistance, Drain to Source On | 0.055 Ω |
| Gate Charge, Total | 230 nC |
| Channel Type | N |
| Number of Pins | 3 |
| Height | 0.82" (20.82mm) |
| Maximum Operating Temperature | +150 °C |
| Width | 0.209" (5.31mm) |
| Voltage, Forward, Diode | 1.8 V |
| Dimensions | 15.87 x 5.31 x 20.82 mm |
| Time, Turn-Off Delay | 100 ns |
| Product Header | Hexfet® Power MOSFET |
| Mounting Type | Through Hole |
| Time, Turn-On Delay | 23 ns |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-247AC |
| Power Dissipation | 280 W |
| Series | IRF Series |
| Forward Transconductance | 24 S |
| Length | 0.625" <5/8> (15.875mm) |
| Voltage, Drain to Source | 200 V |
| Voltage, Breakdown, Drain to Source | 200 V |
