| Typical Gate Charge @ Vgs | Maximum of 63 nC @ 10 V |
| Polarization | N-Channel |
| Temperature Operating Range | -55 to +150 °C |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Drain to Source Voltage | 500 V |
| Channel Type | N |
| Gate to Source Voltage | ±20 V |
| Number of Pins | 3 |
| Height | 0.61" (15.49mm) |
| Maximum Operating Temperature | +150 °C |
| Input Capacitance | 1300 pF @ 25 V |
| Width | 0.183" (4.65mm) |
| Drain to Source On Resistance | 0.85 Ω |
| Forward Voltage, Diode | 2 V |
| Turn Off Delay Time | 49 ns |
| Total Gate Charge | 63 nC |
| Dimensions | 10.51 x 4.65 x 15.49 mm |
| Product Header | Hexfet® Power MOSFET |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Power Dissipation | 125 W |
| Series | IRF Series |
| Forward Transconductance | 4.9 S |
| Drain Current | 8 A |
| Length | 0.413" (10.51mm) |
| Turn On Delay Time | 14 ns |
| Voltage, Breakdown, Drain to Source | 500 V |
