IRF840ASTRLPBF 规格参数
Technology System | MOSFET(Metal Oxide) |
Operating temperature range | -55 to 150C |
Vgs(th) | 4V |
Gate Charge (Qg) | 38nC |
Drain to Source voltage | 500V |
Drain to Source on-state resistance | 0.85Ohm |
Power consumption | 3.1|125W |
Continuous drain current | 8A |
Vgs (Max) | 30V |
Field-effect transistor type | N-CH |
Drive Voltage (Max Rds On, Min Rds On) | 10V |