| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Supplier Package | T-1 3/4 |
| Phototransistor Type | Phototransistor |
| Package Height | 8.6 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Polarity | NPN |
| Lens Shape Type | Domed |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 200 |
| Diameter | 5.75 |
| Maximum Collector Current (mA) | 50 |
| Material | Silicon |
| Standard Package Name | T-1 3/4 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Pin Count | 2 |
| Mounting | Through Hole |
| Type | IR Chip |
| Half Intensity Angle Degrees (°) | 40 |
| Viewing Orientation | Top View |
| Lead Shape | Through Hole |
| Part Status | Active |
| Peak Wavelength (nm) | 850 |
| Packaging | Bulk |
| Lens Color | Clear |
| Maximum Light Current (uA) | 15000 |
