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2N7002K-T1-GE3
Vishay

2N7002K-T1-GE3

晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
中间价(CNY):0.6937
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2N7002K-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)30@25V
Maximum Power Dissipation on PCB @ TC=25°C (W)0.35
ConfigurationSingle
Typical Turn-Off Delay Time (ns)35
PCB changed3
HTS8541.29.00.95
Maximum Gate Source Leakage Current (nA)150
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)350
Channel ModeEnhancement