2N6660JTX02 规格参数
Technology System | MOSFET(Metal Oxide) |
Operating temperature range | -55 to 150C |
Drain to Source voltage | 60V |
Drain to Source on-state resistance | 3Ohm |
Power consumption | 725mW|6.25W |
Continuous drain current | 990mA |
Vgs (Max) | 20V |
Field-effect transistor type | N-CH |
Drive Voltage (Max Rds On, Min Rds On) | 5|10V |
Package | TO-205AD|TO-39-3 |
Vgs(th) | 2 V |