Current, Forward | 300 mA |
Voltage, Reverse | 75 V |
Frequency Range | 1 MHz |
Temperature Operating Range | Maximum of +175 °C |
Primary Type | Switching |
Voltage, Breakdown | 100 V (Min.) |
Configuration | Single |
Capacitance, Diode | 4 pF |
Time, Recovery | 4 ns |
Voltage, Forward | 1 V |
Number of Pins | 2 |
Maximum Operating Temperature | +175 °C |
Diameter | 1.7 mm |
Temperature, Junction, Maximum | 175 °C |
Current, Surge | 4 A |
Time, Reverse Recovery | 4 nS (Max.) |
Dimensions | 1.7 Dia. x 3.9 L mm |
Product Header | Fast Switching Diode |
Mounting Type | Through Hole |
Minimum Operating Temperature | -65 °C |
Speed, Switching | Fast |
Package Type | DO-35 |
Power Dissipation | 500 mW |
Series | 1N914 Series |
Type | Silicon |
Length | 0.153" (3.9mm) |
Current, Reverse | 5 μA |
Thermal Resistance, Junction to Ambient | 300 K/W |