| Current, Forward | 300 mA |
| Voltage, Reverse | 75 V |
| Frequency Range | 1 MHz |
| Temperature Operating Range | Maximum of +175 °C |
| Primary Type | Switching |
| Voltage, Breakdown | 100 V (Min.) |
| Configuration | Single |
| Capacitance, Diode | 4 pF |
| Time, Recovery | 4 ns |
| Voltage, Forward | 1 V |
| Number of Pins | 2 |
| Maximum Operating Temperature | +175 °C |
| Diameter | 1.7 mm |
| Temperature, Junction, Maximum | 175 °C |
| Current, Surge | 4 A |
| Time, Reverse Recovery | 4 nS (Max.) |
| Dimensions | 1.7 Dia. x 3.9 L mm |
| Product Header | Fast Switching Diode |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -65 °C |
| Speed, Switching | Fast |
| Package Type | DO-35 |
| Power Dissipation | 500 mW |
| Series | 1N914 Series |
| Type | Silicon |
| Length | 0.153" (3.9mm) |
| Current, Reverse | 5 μA |
| Thermal Resistance, Junction to Ambient | 300 K/W |