| Height: | 1.04 mm |
| Number of Channels: | 1 Channel |
| Length: | 3.3 mm |
| Product Type: | MOSFET |
| Typical Turn-On Delay Time: | 45 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| USHTS: | 8541290095 |
| Pd - Power Dissipation: | 57 W |
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Id - Continuous Drain Current: | 50 A |
| Vgs - Gate-Source Voltage: | 8 V |
| JPHTS: | 8541290100 |
| KRHTS: | 8541299000 |
| Transistor Polarity: | P-Channel |
| Minimum Operating Temperature: | - 55 C |
| MXHTS: | 85412999 |
| Package / Case: | PowerPAK-1212-8 |
| Tradename: | TrenchFET, PowerPAK |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Brand: | Vishay / Siliconix |
| Fall Time: | 50 ns |
| Factory Pack Quantity: | 3000 |
| TARIC: | 8541290000 |
| Manufacturer: | Vishay |
| Typical Turn-Off Delay Time: | 140 ns |
| Product Category: | MOSFET |
| Forward Transconductance - Min: | 44 S |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Series: | SIS |
| Rise Time: | 50 ns |
| Qg - Gate Charge: | 300 nC |
| Width: | 3.3 mm |
| Transistor Type: | 1 P-Channel |
| ECCN: | EAR99 |
| CAHTS: | 8541290000 |
| Technology: | Si |
| CNHTS: | 8541290000 |
