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SIS330DN-T1-GE3
Vishay Siliconix

SIS330DN-T1-GE3

MOSFET N-CH 30V 35A 1212-8
中间价(CNY):-
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SIS330DN-T1-GE3 规格参数
Transistors - FETs, MOSFETs - Single
PCN Assembly/OriginMultiple Fabracation Changes09/Jul/2014
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Supplier Device PackagePowerPAK® 1212-8
Drain to Source Voltage (Vdss)30V
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Package / CasePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Video FileMOSFET Technologies for Power Conversion