| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 100V |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | SIR876ADP-T1-GE3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | SIR876ADP |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Standard Package | 1 |
| Series | TrenchFET® |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
