| Mounting Style | SMD/SMT |
| Configuration | Dual |
| Id - Continuous Drain Current | 2.3 A |
| Typical Turn-Off Delay Time | 20 ns |
| Transistor Polarity | P-Channel |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | - 20 V |
| Series | SI9 |
| Tradename | TrenchFET |
| Rise Time | 12 ns |
| Transistor Type | 2 P-Channel |
| Number of Channels | 2 Channel |
| Package / Case | SOIC-8 |
| Length | 5 mm |
| Technology | Si |
| Manufacturer | Vishay |
| Height | 1.55 mm |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2 W |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Width | 4 mm |
