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SI4888DY-T1-GE3
Vishay Siliconix

SI4888DY-T1-GE3

MOSFET 30V 16A 3.5W 7.0mohm @ 10V
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SI4888DY-T1-GE3 规格参数
Product Attributes Select All
Input Capacitance (Ciss) @ Vds-
Operating Temperature-55°C ~ 150°C (TJ)
FET FeatureStandard
CategoryDiscrete Semiconductor Products
DatasheetsSI4888DY
Gate Charge (Qg) @ Vgs24nC @ 5V
FET TypeMOSFET N-Channel, Metal Oxide
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs7 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA