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SI4888DY-T1-E3-S
Vishay Siliconix

SI4888DY-T1-E3-S

MOSFET
中间价(CNY):-
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SI4888DY-T1-E3-S 规格参数
Mounting StyleSMD/SMT
Vds - Drain-Source Breakdown Voltage30 V
ConfigurationSingle
Package / CaseSO-8
Id - Continuous Drain Current16 A
Vgs - Gate-Source Breakdown Voltage20 V
ManufacturerVishay
Maximum Operating Temperature+ 150 C
Transistor PolarityN-Channel
Pd - Power Dissipation3.5 W
Rds On - Drain-Source Resistance7 mOhms
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