SI4888DY-T1-E3-S 规格参数
| Mounting Style | SMD/SMT |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Configuration | Single |
| Package / Case | SO-8 |
| Id - Continuous Drain Current | 16 A |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Manufacturer | Vishay |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 3.5 W |
| Rds On - Drain-Source Resistance | 7 mOhms |