SI4888DY-T1-E3-S 规格参数
Mounting Style | SMD/SMT |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Single |
Package / Case | SO-8 |
Id - Continuous Drain Current | 16 A |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Manufacturer | Vishay |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 3.5 W |
Rds On - Drain-Source Resistance | 7 mOhms |