SI4888DY-E3 规格参数
Mounting Style | SMD/SMT |
Configuration | Single |
Id - Continuous Drain Current | 16 A |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Typical Turn-Off Delay Time | 44 ns |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Fall Time | 10 ns |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Tradename | TrenchFET |