| Transistors - FETs, MOSFETs - Single |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Supplier Device Package | 8-SO |
Drain to Source Voltage (Vdss) | 30V |
Power Dissipation (Max) | 1.56W (Ta) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Technology | MOSFET (Metal Oxide) |
Video File | MOSFET Technologies for Power Conversion |
Manufacturer | Vishay Siliconix |
PCN Obsolescence/ EOL | SIL-0632014 16/Apr/2014 |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | SI4886DY |
Categories | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
EDA / CAD Models | Download from Accelerated Designs |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
Standard Package | 2,500 |
Series | TrenchFET® |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |