| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1525pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 30V |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | SI4884BDY-T1-E3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | SI4884BDY |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Standard Package | 1 |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
