SI4860DY-T1-E3 规格参数
| Transistors - FETs, MOSFETs - Single | |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 30V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |