SI2365EDS-T1-GE3 规格参数
Input Capacitance (Ciss) @ Vds | - |
Other Names | SI2365EDS-T1-GE3DKR |
FET Feature | Standard |
PCN Assembly/Origin | Wafer Fab Addition 22/Jun/2015 |
Category | Discrete Semiconductor Products |
Datasheets | SI2365EDS |
Online Catalog | P-Channel Logic Level Gate FETs |
Gate Charge (Qg) @ Vgs | 36nC @ 8V |
FET Type | MOSFET P-Channel, Metal Oxide |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 4A, 4.5V |