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SI2365EDS-T1-GE3
Vishay Siliconix

SI2365EDS-T1-GE3

MOSFET P-CH 20V 5.9A TO-236
中间价(CNY):0.8575
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SI2365EDS-T1-GE3 规格参数
Input Capacitance (Ciss) @ Vds-
Other NamesSI2365EDS-T1-GE3DKR
FET FeatureStandard
PCN Assembly/OriginWafer Fab Addition 22/Jun/2015
CategoryDiscrete Semiconductor Products
DatasheetsSI2365EDS
Online CatalogP-Channel Logic Level Gate FETs
Gate Charge (Qg) @ Vgs36nC @ 8V
FET TypeMOSFET P-Channel, Metal Oxide
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs32 mOhm @ 4A, 4.5V