| Transistors - FETs, MOSFETs - Single |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Supplier Device Package | TO-247-3 |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Power Dissipation (Max) | 125W (Tc) |
| Package / Case | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | *IRFPG30PBF |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | IRFPG30 |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| EDA / CAD Models | Download from Accelerated Designs |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 25 |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
