| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| PCN Assembly/Origin | SIL-099-2014-Rev-0 12/Nov/2014 |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 500V |
| Package / Case | TO-220-3 |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Other Names | *IRF840PBF |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Datasheets | IRF840, SiHF840 Packaging Information |
| Mounting Type | Through Hole |
| EDA / CAD Models | Download from Accelerated Designs |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 50 |
| Series | - |
| Power - Max | 125W |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Family | Transistors - FETs, MOSFETs - Single |
