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1N914TAP
Vishay Semiconductor

1N914TAP

DIODE GEN PURP 100V 300MA DO35
中间价(CNY):-
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1N914TAP 规格参数
Product Attributes Select All
SpeedFast Recovery =< 500ns, > 200mA (Io)
CategoryDiscrete Semiconductor Products
Reverse Recovery Time (trr)4ns
Capacitance @ Vr, F4pF @ 0V, 1MHz
Datasheets1N914 Datasheet
Diode TypeStandard
Mounting TypeThrough Hole
Supplier Device PackageDO-35
Current - Reverse Leakage @ Vr5µA @ 75V
Standard Package10,000