TEMT1000 规格参数
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| Maximum Collector-Emitter Voltage (V) | 70(Min) |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Package | SMD |
| Phototransistor Type | Phototransistor |
| Package Height | 2.7 |
数据手册
非常抱歉我们暂时未能收集到您需要的数据手册，请留下您的联系方式，我们将会在收集到相关资料后第一时间为您反馈，感谢您对我们平台的信赖和支持！