首页/SIS330DN-T1-GE3搜索结果/SIS330DN-T1-GE3规格参数/
SIS330DN-T1-GE3
Vishay Dale

SIS330DN-T1-GE3

VISHAY  SIS330DN-T1-GE3  MOSFET Transistor, N Channel, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
中间价(CNY):5.459
推荐供应商
SIS330DN-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)1300@15V
ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)16|19
PCB changed8
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)12|9
Maximum Power Dissipation (mW)3700
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)11|16
数据手册
非常抱歉我们暂时未能收集到您需要的数据手册,请留下您的联系方式,我们将会在收集到相关资料后第一时间为您反馈,感谢您对我们平台的信赖和支持!