SIHP30N60E-E3 规格参数
| Mounting Style | Through Hole |
| Configuration | Single |
| Id - Continuous Drain Current | 29 A |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| RoHS | Y |
| Qg - Gate Charge | 85 nC |
| Minimum Operating Temperature | - 55 C |
| Brand | Vishay Semiconductors |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Series | E |
数据手册
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