| Typical Input Capacitance @ Vds (pF) | 665@10V |
| Configuration | Dual Dual Drain |
| Typical Turn-Off Delay Time (ns) | 29 |
| PCB changed | 8 |
| HTS | 8541.29.00.95 |
| Number of Elements per Chip | 2 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 50 |
| Maximum Power Dissipation (mW) | 2000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 21 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 13 |
| Process Technology | TrenchFET |
| Typical Gate to Source Charge (nC) | 2.5 |
| Package Height | 1.55(Max) |
| Channel Type | P |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Drain Source Resistance (mOhm) | 58@4V |
| Package Length | 5(Max) |
| Typical Gate Charge @ 10V (nC) | 17 |
| Standard Package Name | SOP |
| Typical Reverse Recovery Charge (nC) | 10 |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Typical Output Capacitance (pF) | 220 |
| Lead Shape | Gull-wing |
| Part Status | Active |
| Product Category | Power MOSFET |
| Typical Gate to Drain Charge (nC) | 1.7 |
| Packaging | Tape and Reel |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Package Width | 4(Max) |
| Typical Gate Charge @ Vgs (nC) | 8@4.5V|17@10V |
