首页/SI4922BDY-T1-GE3搜索结果/SI4922BDY-T1-GE3规格参数/
SI4922BDY-T1-GE3
Vishay Dale

SI4922BDY-T1-GE3

Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
中间价(CNY):5.5022
推荐供应商
SI4922BDY-T1-GE3 规格参数
Typical Input Capacitance @ Vds (pF)2070@15V
ConfigurationDual Dual Drain
Typical Turn-Off Delay Time (ns)68|31
PCB changed8
Number of Elements per Chip2
ECCN (US)EAR99
Typical Rise Time (ns)27|53
Maximum Power Dissipation (mW)2000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)13|7
Minimum Operating Temperature (°C)-50
数据手册
非常抱歉我们暂时未能收集到您需要的数据手册,请留下您的联系方式,我们将会在收集到相关资料后第一时间为您反馈,感谢您对我们平台的信赖和支持!