SI4884BDY-T1-GE3 规格参数
| Operating Temperature | -55 to 150 °C |
| Category | MOSFET |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time | 18|22 ns |
| Typical Fall Time | 8 ns |
| Channel Mode | Enhancement |
| Mounting | Surface Mount |
| Typical Turn-On Delay Time | 18|8 ns |
| Typical Rise Time | 160|11 ns |
| Manufacturer | Vishay / Siliconix |
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