Configuration | Single |
Typical Turn-Off Delay Time (ns) | 62|65 |
PCB changed | 3 |
HTS | 8541.29.00.95 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 6|21 |
Maximum Power Dissipation (mW) | 1000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 22|9 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOT-23 |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 14|15 |
Process Technology | TrenchFET |
Package Height | 1.02(Max) |
Channel Type | P |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 4.5 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Drain Source Resistance (mOhm) | 32@4.5V |
Package Length | 3.04(Max) |
Standard Package Name | SOT-23 |
Pin Count | 3 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Maximum Gate Threshold Voltage (V) | 1 |
Package Width | 1.4(Max) |
Typical Gate Charge @ Vgs (nC) | 23.8@8V|13.8@4.5V |