SI2308DS-T1-E3 规格参数
| Rated Power Dissipation | 1.25 W |
| Channel Type | N-Channel |
| Qg Gate Charge | 10 nC |
| Drain-to-Source Voltage [Vdss] | 60 V |
| Drain-Source On Resistance-Max | 0.16 Ω |
数据手册
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| Rated Power Dissipation | 1.25 W |
| Channel Type | N-Channel |
| Qg Gate Charge | 10 nC |
| Drain-to-Source Voltage [Vdss] | 60 V |
| Drain-Source On Resistance-Max | 0.16 Ω |