Typical Input Capacitance @ Vds (pF) | 190@30V |
Configuration | Single |
Typical Turn-Off Delay Time (ns) | 11 |
PCB changed | 3 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 16 |
Maximum Power Dissipation (mW) | 1090 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 15 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOT-23 |
Typical Fall Time (ns) | 11 |
Process Technology | TrenchFET |
Typical Gate to Source Charge (nC) | 0.8 |
Package Height | 1.02(Max) |
Maximum Positive Gate Source Voltage (V) | 20 |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 1.9 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 156@10V |
Package Length | 3.04(Max) |
Typical Gate Charge @ 10V (nC) | 4.5 |
Standard Package Name | SOT-23 |
Typical Reverse Recovery Charge (nC) | 10 |
Maximum Diode Forward Voltage (V) | 1.2 |
Pin Count | 3 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 26 |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 1 |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 3 |
Package Width | 1.4(Max) |
Typical Gate Charge @ Vgs (nC) | 4.5@10V|2.3@4.5V |