Typical Input Capacitance @ Vds (pF) | 18.5@30V |
Configuration | Dual |
Typical Turn-Off Delay Time (ns) | 13 |
PCB changed | 6 |
HTS | 8541.10.00.80 |
Maximum Gate Source Leakage Current (nA) | 150 |
Number of Elements per Chip | 2 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 12 |
Maximum Power Dissipation (mW) | 300 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 6.5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SC-70 |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 14 |
Process Technology | TrenchFET |
Typical Gate to Source Charge (nC) | 0.2 |
Package Height | 1(Max) |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 0.34 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 1400@10V |
Package Length | 2 |
Typical Gate Charge @ 10V (nC) | 0.9 |
Standard Package Name | SC |
Typical Reverse Recovery Charge (nC) | 13 |
Pin Count | 6 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 7.5 |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 0.15 |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 2.5 |
Package Width | 1.25 |
Typical Gate Charge @ Vgs (nC) | 0.5@4.5V|0.9@10V |