IRFP360PBF 规格参数
Typical Gate Charge @ Vgs | Maximum of 210 nC @ 10 V |
Category | Power MOSFET |
Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Typical TurnOff Delay Time | 100 ns |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage | 400 V |
Channel Mode | Enhancement |
Forward Diode Voltage | 1.8 V |
Channel Type | N |
Height | 20.82 mm |
数据手册
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