Vishay Dale

IRF840PBF

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ohm; ID 8A; TO-220AB; PD 125W; VGS +/-20V

中间价(CNY):5.2271

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IRF840PBF 规格参数

Typical Gate Charge @ Vgs	Maximum of 63 nC @ 10 V
Category	Power MOSFET
Configuration	Single
Maximum Gate Source Voltage	±20 V
Typical TurnOff Delay Time	49 ns
Number of Elements per Chip	1
Maximum Drain Source Voltage	500 V
Channel Mode	Enhancement
Forward Diode Voltage	2 V
Channel Type	N
Height	15.49 mm
Maximum Operating Temperature	+150 °C
Width	4.65 mm
Typical Turn On Delay Time	14 ns
Operating Temperature Range	-55 to +150 °C
Dimensions	10.51 x 4.65 x 15.49 mm
Mounting Type	Through Hole
Maximum Drain Source Resistance	0.85 Ω
Minimum Operating Temperature	-55 °C
Pin Count	3
Typical Input Capacitance @ Vds	1300 pF @ 25 V
Package Type	TO-220AB
Forward Transconductance	4.9 S
Length	10.51 mm
Maximum Power Dissipation	125 W
Maximum Continuous Drain Current	8 A

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