Vishay Dale
IRF640NPBF
HEXFET power MOSFET, N-Channel type, 200V drain-source breakdown voltage, 0.18R drain-source on-resistance, 18A drain current, 20V gate source voltage, 14ns turn-on time, 45ns turn-off time, 125W power, TO-220AB case, dynamic dv/dt rating, repetitive avalanche rated, fast switching, ease of paralleling, simple drive requirements.
中间价(CNY):5.3797
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