ILD207T. 规格参数
| Isolation Voltage | 4000 Vrms |
| Mounting Style | SMD/SMT |
| Collector-Emitter Breakdown Voltage | 70 V |
| Output Type | NPN Phototransistor |
| Maximum Collector Emitter Saturation Voltage | 0.4 V |
| Maximum Collector Emitter Voltage | 70 V |
| Minimum Operating Temperature | - 55 C |
| Current Transfer Ratio | 200 % |
| Number of Channels | 2 Channel |
| Package / Case | SOIC-8 |
| Length | 5.84 mm |
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