2N6660-E3 规格参数
| Typical Input Capacitance @ Vds (pF) | 35@25V |
| Category | Power MOSFET |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Taxonomy | Diodes, Transistors and Thyristors > FET Transistors > MOSFET |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Number of Elements per Chip | 1 |
| Package Width (mm) | 8.15(Max) |
| Maximum Power Dissipation (mW) | 725 |
| Channel Mode | Enhancement |
| Standard Package Name | TO-205AD |
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