| Typical Input Capacitance @ Vds (pF) | 1050@25V |
| Configuration | Single |
| PCB changed | 3 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 20 |
| Maximum Power Dissipation (mW) | 40000 |
| Channel Mode | Enhancement |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | TO-220NIS |
| Typical Fall Time (ns) | 35 |
| Process Technology | pi-MOS VI |
| Package Height | 15 |
| Channel Type | N |
| Maximum Continuous Drain Current (A) | 6 |
| Military | No |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Drain Source Resistance (mOhm) | 1250@10V |
| Material | Si |
| Package Length | 10 |
| Typical Gate Charge @ 10V (nC) | 28 |
| Standard Package Name | TO-220 |
| Pin Count | 3 |
| Mounting | Through Hole |
| Tab | Tab |
| Lead Shape | Through Hole |
| Part Status | LTB |
| Product Category | Power MOSFET |
| Package Width | 4.5 |
| Typical Gate Charge @ Vgs (nC) | 28@10V |
